At present, with the continuous shrinking of semiconductor technology, advanced integrated circuit devices have been transformed from planar to three-dimensional structures, and integrated circuit manufacturing processes are becoming more and more complex, often requiring hundreds or even thousands of process steps. For the manufacture of advanced semiconductor devices, after each process, there will be more or less particle contaminants, metal residues or organic residues on the surface of the silicon wafer. Devices are increasingly sensitive to particle contamination, impurity concentration and quantity.
Higher requirements are put forward for the cleaning technology of contamination particles on the mask surface of silicon wafers. The key point is to overcome the great adsorption force between the contamination particles and the substrate. At present, many semiconductor manufacturers use acid for cleaning. Washing, manual wiping, not to mention the slow efficiency, will also produce secondary pollution. So what kind of cleaning method is more suitable for cleaning semiconductor products at present? Laser cleaning is a more suitable method at present. When the laser is scanned, the dirt on the surface of the material is removed, and the dirt in the gap is completely removed. It can be easily removed without scratching the surface of the material or causing secondary pollution. It is a safe choice.
In addition, as the size of integrated circuit devices continues to shrink, material loss and surface roughness during the cleaning process have become issues that must be paid attention to. It is the most basic requirement to remove particles without material loss and pattern damage. Contact, no thermal effect, no surface damage to the object to be cleaned, and no secondary pollution, which are incomparable to traditional cleaning methods. It is the best cleaning method to solve the pollution of semiconductor devices.